In the present work, vertical ZnO nanorods (NRs) were grown onto ITO substrates by a simple two step chemical process at relatively low temperature by using successive ionic layer absorption and reaction method (SILAR) and chemical bath deposition (CBD) method. The investigated on n- ZnO/ p-Polythiophene heterojunction device have been fabricated with ZnO nanorods. Structural analysis reveals that the grown ZnO NRs exhibit (002) reflection with higher intensity, indicating that the ZnO NRs grown in c-axis orientation. FESEM image shows the surface morphology of grown ZnO nanorods was of hexagonal wurtzite structure whose diameter varies from 200 nm to 1μm. Room temperature Photoluminescence exhibited strong UV emission at ∼386 nm and a negligible green band confirms the presence of very low concentration of oxygen vacancies in the well-aligned ZnO nanorods. The current–voltage (I –V) characteristics of the heterojunctions show good rectifying diode characteristics. These results indicate that hybrid device fabricated from solution process is a promising approach for future light-emitting diodes (LEDs) devices.