Investigation of Microstructure, Electrical and Optical Properties of WO3 Film by RF Magnetron Sputtering with Ar/H2

Chao Te Lee; Po Kai Chiu; C.N. Hsiao; C.L. Huang; Tao Lian Chuang; Chen Yu Hua

doi:10.4028/www.scientific.net/AMR.123-125.983

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 123-125Investigation of Microstructure, Electrical and...

Investigation of Microstructure, Electrical and Optical Properties of WO₃ Film by RF Magnetron Sputtering with Ar/H₂

Abstract:

WO3 thin film was prepared on glass substrate at room temperature by RF magnetron sputtering deposition with hybrid (Ar+2.5% H2) gas. Effects of RF power on the microstructure, electrical and optical properties of WO3 films are investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. X-ray diffraction analysis reveals that all of the films are amorphous. The minimum resistivity of the WO3 film prepared with RF 70W is 5.74 × 10-3 -cm. The average transmittance in the visible region was decreased with increased RF power from 50W to 150W. The average transmittance was lower than 15% with RF 50W. The electrical and optical mechanisms have been explained in terms of composition and film thickness were changed with RF power.

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Periodical:

Advanced Materials Research (Volumes 123-125)

Pages:

983-986

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.123-125.983

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Online since:

August 2010

Authors:

Chao Te Lee, Po Kai Chiu, C.N. Hsiao, C.L. Huang, Tao Lian Chuang, Chen Yu Hua

Keywords:

Resistivity, RF Magnetron Sputtering, WO₃Thin Film

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