Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad

Mao Li; Yong Wei Zhu; Jun Li; Jian Feng Ye; Ji Long Fan

doi:10.4028/www.scientific.net/AMR.126-128.82

Paper Titles

Laser Assist Powder Jet Deposition
p.58

A Study on Pressure Stability in Double-Sided Polishing Process
p.64

Process Influences in the Wire Cutting of Concrete
p.70

Research on Machining Simulation of Ultra High-Speed Grinding Machine Tool Based on Web
p.77

Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad
p.82

Grinding Characteristic Research of High Efficiency Deep Grinding for Viscous Material
p.88

A Simulation System for Grinding Based on Virtual Reality
p.96

Analysis of Roughness in Super-High Speed Point Grinding
p.101

Grinding Performance of a Grain-Arranged Diamond Wheel against Aluminum Alloys and Ti6Al4V
p.107

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 126-128Wear of Polishing Pad and Pattern Optimization of...

Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad

Abstract:

The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of the wafer lapped with a uniform pattern pad and that with an optimized pattern was compared. Results show that the PV value of the latter is lower that of the former.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 126-128)

Pages:

82-87

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.126-128.82

Citation:

Cite this paper

Online since:

August 2010

Authors:

Mao Li, Yong Wei Zhu, Jun Li, Jian Feng Ye, Ji Long Fan

Keywords:

Fixed Abrasive Pad (FAP), Flatness, Optimized Pattern, Trajectory Density, Wear

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G.H. Fu and C. Abhijit: Electronic Materials Vol. 30 (2001), p.400.

Google Scholar

[2] Z. Stavreava, D. Zeidler and Drescher: Applied Surface Science Vol. 108 (1997), p.39.

Google Scholar

[3] B. Lee, D.S. Boning and L. Economikos: Proceedings of Chemical Mechanical Polishing-MIC , Santa Clara, CA, USA, (2001).

Google Scholar

[4] B.H. Lv, J.L. Yuan, Y.X. Yao, Z.W. Wang, B.C. Tao, J.J. Zhen and P. Zhao: Materials Science Form Vol. 532-533(2006), p.460.

Google Scholar

[5] B.J. Hopper, G. Byrne and S. Galligan: Materials Processing Technology Vol. 123 (2002), p.107.

Google Scholar

[6] X.H. Yang, X.Y. Hu, W. Zhang and Z.H. Hu: China Mechanical Engineering Vol. 14 (2003), p.1552.

Google Scholar

[7] M. Li, Y.W. Zhu, J. Li and K. Lin: Key Engineering Materials, Vol. 431-432(2010), p.318.

Google Scholar

[8] M. Chen, D.Q. Chen Q.S. Xiao and X.Y. Hong: Photographic Science and Photochemistry, Vol. 19(2001), p.208.

Google Scholar