Design of MEMS High g Accelerometer and Study on the Overload Ability

Yun Bo Shi; Ping Li; Jun Liu

doi:10.4028/www.scientific.net/AMR.139-141.1582

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 139-141Design of MEMS High g Accelerometer and Study on...

Design of MEMS High g Accelerometer and Study on the Overload Ability

Abstract:

Aiming to the application requirements of high overload environment, a MEMS acceleration sensor with high overload ability was designed in this paper. It adopted beam - island structure, which dispersed the stress by the chamfer that was on the root and the end of the structure beam when the acceleration effect on the structure. ANSYS simulation results showed that the structure can improve the ability of anti-overload of the acceleration sensor significantly, and the first- order natural frequency can up to 550 kHz. The designed sensor was processed by the standard processing technology, and the ability of anti-overload of the acceleration sensor was tested by Hopkinson bar. The results of the test showed that the signal and structure of the sensor is normal when the designed acceleration sensor was effected on the 230,000 g. The sensitivity of the senor is 0.88uV/g. In such situation, the designed sensor can meet application requirements of high overload environment effectively.

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Periodical:

Advanced Materials Research (Volumes 139-141)

Pages:

1582-1586

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.139-141.1582

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Online since:

October 2010

Authors:

Yun Bo Shi, Ping Li, Jun Liu

Keywords:

High Overload Ability, Hopkinson Impact Test, MEMS High g Accelerometer

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