Effect of Annealing Temperatures on the Microstructure of CuInS₂ Thin Film by One-Step Electrodeposition

Abstract:

CuInS2 thin film used for photovoltaic applications was prepared by one-step electrodeposition. The films were annealed at different temperatures of 350, 400, 500 °C. Effects of annealing temperatures on the properties of the film were investigated by the way of X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR Spectroscopy. The result shows that CuInS2 film with chalcopyrite structure can be successfully prepared by one-step electrodeposition. Annealing is effective in improving the crystallinity of the thin film. The temperature of 400°C is favorable to the grain growth of the film without the generation of impurity.

• Periodical: Advanced Materials Research (Volumes 150-151)
• Pages: 530-533
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.150-151.530
• Online since: October 2010
• Authors: Lin Lu, Yan Jie Wang, Xiao Gang Li
• Keywords: Annealing Temperature, CuInS₂ Film, One-Step Electrodeposition

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