Effect of Annealing Temperatures on the Microstructure of CuInS2 Thin Film by One-Step Electrodeposition

Abstract:

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CuInS2 thin film used for photovoltaic applications was prepared by one-step electrodeposition. The films were annealed at different temperatures of 350, 400, 500 °C. Effects of annealing temperatures on the properties of the film were investigated by the way of X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR Spectroscopy. The result shows that CuInS2 film with chalcopyrite structure can be successfully prepared by one-step electrodeposition. Annealing is effective in improving the crystallinity of the thin film. The temperature of 400°C is favorable to the grain growth of the film without the generation of impurity.

Info:

Periodical:

Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao

Pages:

530-533

DOI:

10.4028/www.scientific.net/AMR.150-151.530

Citation:

L. Lu et al., "Effect of Annealing Temperatures on the Microstructure of CuInS2 Thin Film by One-Step Electrodeposition", Advanced Materials Research, Vols. 150-151, pp. 530-533, 2011

Online since:

October 2010

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Price:

$35.00

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