Effect of Annealing Temperatures on the Microstructure of CuInS2 Thin Film by One-Step Electrodeposition
CuInS2 thin film used for photovoltaic applications was prepared by one-step electrodeposition. The films were annealed at different temperatures of 350, 400, 500 °C. Effects of annealing temperatures on the properties of the film were investigated by the way of X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis-NIR Spectroscopy. The result shows that CuInS2 film with chalcopyrite structure can be successfully prepared by one-step electrodeposition. Annealing is effective in improving the crystallinity of the thin film. The temperature of 400°C is favorable to the grain growth of the film without the generation of impurity.
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
L. Lu et al., "Effect of Annealing Temperatures on the Microstructure of CuInS2 Thin Film by One-Step Electrodeposition", Advanced Materials Research, Vols. 150-151, pp. 530-533, 2011