Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering
Ni-doped Cu3N films were prepared by radio frequency (RF) reactive magnetron sputtering method under different N2/(N2+Ar) ratios at room temperature. X-ray diffraction (XRD) patterns show that Ni-doped Cu3N films have the preferred growth along the (100) plane. The lattice parameters of Ni-doped Cu3N films increases obviously compared with the pure Cu3N films, which indicate that some Ni atoms are incorporated into the Cu3N host lattice. The electrical resistivity of Ni-doped Cu3N films has a remarkable change and decreases as the nitrogen ratio decreases. The optical energy gap of Ni-doped Cu3N film is around 1 eV which has no obvious change. The morphology and the thermal stability of doped Cu3N films were also studied.
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
J. Wang et al., "Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering", Advanced Materials Research, Vols. 150-151, pp. 72-75, 2011