Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering

Abstract:

Article Preview

Ni-doped Cu3N films were prepared by radio frequency (RF) reactive magnetron sputtering method under different N2/(N2+Ar) ratios at room temperature. X-ray diffraction (XRD) patterns show that Ni-doped Cu3N films have the preferred growth along the (100) plane. The lattice parameters of Ni-doped Cu3N films increases obviously compared with the pure Cu3N films, which indicate that some Ni atoms are incorporated into the Cu3N host lattice. The electrical resistivity of Ni-doped Cu3N films has a remarkable change and decreases as the nitrogen ratio decreases. The optical energy gap of Ni-doped Cu3N film is around 1 eV which has no obvious change. The morphology and the thermal stability of doped Cu3N films were also studied.

Info:

Periodical:

Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao

Pages:

72-75

DOI:

10.4028/www.scientific.net/AMR.150-151.72

Citation:

J. Wang et al., "Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering", Advanced Materials Research, Vols. 150-151, pp. 72-75, 2011

Online since:

October 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.