The Geometric and Electronic Structures of Fen-1Si(n=2-7) Clusters

Abstract:

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The geometric structures and electronic properties of Si doped Fen (n=2-7) clusters have been systematically studied at the BPW91 level in density-functional theory (DFT). Calculated results show that an Si impurity does not change the ground-state structure of small iron clusters and prefers to occupy surface site bonding with iron atoms as many as possible. The second-order energy difference and the vertical ionization potential show that n=4 and 6 are magic numbers within the size range studied, but the maximum value occurs at n=4 for the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital(LUMO). It is found that the hybridization intensity between Si and Fe atoms is relevant to the stability of clusters.

Info:

Periodical:

Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao

Pages:

984-987

DOI:

10.4028/www.scientific.net/AMR.150-151.984

Citation:

S. Q. Yu et al., "The Geometric and Electronic Structures of Fen-1Si(n=2-7) Clusters", Advanced Materials Research, Vols. 150-151, pp. 984-987, 2011

Online since:

October 2010

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$35.00

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