Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon

Abstract:

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We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation

Info:

Periodical:

Advanced Materials Research (Volumes 150-151)

Edited by:

Jinglong Bu, Zhengyi Jiang and Sihai Jiao

Pages:

992-995

DOI:

10.4028/www.scientific.net/AMR.150-151.992

Citation:

X. Y. Lv et al., "Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon", Advanced Materials Research, Vols. 150-151, pp. 992-995, 2011

Online since:

October 2010

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Price:

$35.00

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