Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon

Xiao Yi Lv; Jia Qing Mo; Fu Ru Zhong; Zhen Hong Jia; Mei Xiang; Tao Jiang

doi:10.4028/www.scientific.net/AMR.150-151.992

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 150-151Improved Photoluminescence from Ar+ and N+ Ions...

Improved Photoluminescence from Ar⁺ and N⁺ Ions Co-Implanted Porous Silicon

Abstract:

We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation

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Advanced Materials Research (Volumes 150-151)

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992-995

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.150-151.992

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Online since:

October 2010

Authors:

Xiao Yi Lv, Jia Qing Mo, Fu Ru Zhong, Zhen Hong Jia, Mei Xiang, Tao Jiang

Keywords:

Ion Implantation, Photoluminescence (PL), Porous Silicon (PS)

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