Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC

Hu Jun Jia; Yin Tang Yang; Chang Chun Chai

doi:10.4028/www.scientific.net/AMR.152-153.1529

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 152-153Comparison of Ohmic Contact Characteristics of...

Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC

Abstract:

Ohmic contact testing structures have been prepared on n type 4H-SiC layer with different multiple-layer metal, such as Ti/Ni/Au, Cr/Ni/Au and Ni/Ti/Au by magnetic sputter process. Special contact resistances about 10-6cm2 are achieved using TLM measurements. The composition of the alloy areas have been analyzed through XPS and AES, and the results show that the C vacancies induced by carbonides formation are important for ohmic contacts of Ti and Cr to SiC. However, the Ni/SiC structures need a relatively higher alloy temperature, so that the out diffusion of C atoms can offset the lack of Si in the top layer of SiC.

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Periodical:

Advanced Materials Research (Volumes 152-153)

Pages:

1529-1532

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.152-153.1529

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Online since:

October 2010

Authors:

Hu Jun Jia, Yin Tang Yang, Chang Chun Chai

Keywords:

Carbon Vacancy, Magnetic Sputtering, Ohmic Contact, Silicon Carbide (SiC)

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