Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC

Abstract:

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Ohmic contact testing structures have been prepared on n type 4H-SiC layer with different multiple-layer metal, such as Ti/Ni/Au, Cr/Ni/Au and Ni/Ti/Au by magnetic sputter process. Special contact resistances about 10-6cm2 are achieved using TLM measurements. The composition of the alloy areas have been analyzed through XPS and AES, and the results show that the C vacancies induced by carbonides formation are important for ohmic contacts of Ti and Cr to SiC. However, the Ni/SiC structures need a relatively higher alloy temperature, so that the out diffusion of C atoms can offset the lack of Si in the top layer of SiC.

Info:

Periodical:

Advanced Materials Research (Volumes 152-153)

Edited by:

Zhengyi Jiang, Jingtao Han and Xianghua Liu

Pages:

1529-1532

DOI:

10.4028/www.scientific.net/AMR.152-153.1529

Citation:

H. J. Jia et al., "Comparison of Ohmic Contact Characteristics of Different Metal on N Type 4H-SiC", Advanced Materials Research, Vols. 152-153, pp. 1529-1532, 2011

Online since:

October 2010

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Price:

$35.00

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