Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

Abstract:

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Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

Info:

Periodical:

Edited by:

Dehuai Zeng

Pages:

333-337

DOI:

10.4028/www.scientific.net/AMR.159.333

Citation:

A. Prakash et al., "Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure", Advanced Materials Research, Vol. 159, pp. 333-337, 2011

Online since:

December 2010

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Price:

$35.00

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