Improved Bipolar Resistive Switching Memory Using W/TaOx/W Structure

Amit Prakash; Siddheswar Maikap; H.Y. Lee; G. Chen; F. Chen; Min Jing Tsai; M.J. Kao

doi:10.4028/www.scientific.net/AMR.159.333

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 159Improved Bipolar Resistive Switching Memory Using...

Improved Bipolar Resistive Switching Memory Using W/TaO_x/W Structure

Abstract:

Resistive switching memory characteristics of high- TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ~500µAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5x103 cycles and good data retention with a stable HRS/LRS.

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Periodical:

Advanced Materials Research (Volume 159)

Pages:

333-337

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.159.333

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Online since:

December 2010

Authors:

Amit Prakash, Siddheswar Maikap, H.Y. Lee, G. Chen, F. Chen, Min Jing Tsai, M.J. Kao

Keywords:

High-κ TaO_X, Resistive Memory, Tungsten (W)

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