Study of ITO Thin Film Deposited by RF Magnetron Sputter at Low Temperature

Abstract:

Article Preview

ITO thin films used in PTCDA/Si detector should be made at low temperature for low temperature resistance of substrate. ITO thin films were deposited at low temperature by RF magnetron sputtering. Properties of ITO thin films such as conductivity and transmission measured by 4 point probe and UV spectral photometry respectively. The results show that the sputtering pressure is an important parameter in the deposition of indium tin oxide(ITO) thin films, which affects the properties of ITO films. The optimized parameter for preparation of ITO thin films at low temperature are sputtering pressure 0.45 Pa, sputtering power 45W. Meanwhile, the post-annealing is not necessary.

Info:

Periodical:

Advanced Materials Research (Volumes 160-162)

Edited by:

Guojun Zhang and Jessica Xu

Pages:

1193-1198

DOI:

10.4028/www.scientific.net/AMR.160-162.1193

Citation:

X. J. Lu and D. W. Fan, "Study of ITO Thin Film Deposited by RF Magnetron Sputter at Low Temperature", Advanced Materials Research, Vols. 160-162, pp. 1193-1198, 2011

Online since:

November 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.