Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays
The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.
Guojun Zhang and Jessica Xu
C. B. Li et al., "Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays", Advanced Materials Research, Vols. 160-162, pp. 1331-1335, 2011