Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

Abstract:

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The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

Info:

Periodical:

Advanced Materials Research (Volumes 160-162)

Edited by:

Guojun Zhang and Jessica Xu

Pages:

1331-1335

DOI:

10.4028/www.scientific.net/AMR.160-162.1331

Citation:

C. B. Li et al., "Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays", Advanced Materials Research, Vols. 160-162, pp. 1331-1335, 2011

Online since:

November 2010

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Price:

$35.00

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