Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

Abstract:

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

• Periodical: Advanced Materials Research (Volumes 160-162)
• Pages: 1331-1335
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.160-162.1331
• Online since: November 2010
• Authors: Chuan Bo Li, Kristel Fobelets, S.N. Syed Jalal, Wei A. Ng, Zahid A.K. Durrani
• Keywords: 1/f Noise Measurement, Chemical Modification, Electrical Properties, Si Nanowire Array

References

[1] H. J. Fan, P. Werner, and M. Zacharias, Small 2 (2006), p.700.

[2] C. B. Li, K. Usami, T. Muraki, H. Mizuta and S. Oda, Appl. Phys. Lett., 93(2008) p.041917.

[3] J. Xiang, W.; Lu, Y. J. Hu, Y. Wu, H. Yan, and C. M. Lieber, Nature 441 (2006) , p.489.

[4] C. B. Li, K. Usami, H. Mizuta, S. Oda. ，J. Appl. Phys. 106(2009), p.046102.

[5] C.B. Li , K. Usami, G. Yamahata, Y. Tsuchiya, H. Mizuta, S. Oda, Applied Physics Express, 2(2009), p.015004.

DOI: 10.1143/apex.2.015004

[6] Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, R. S. Williams, Nano Lett. 4 (2004), p.245.

[7] Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293 (2001) , p.1289.

[8] G. Zheng, F. Patolsky, Y. Cui, W. U. Wang, C. M. Lieber, Nat. Biotechnol. 23 (2005), p.1294.

[9] F. Patolsky, B. P. Timko, G. Yu, Y. Fang, A. B. Greytak, G. Zheng, C. M. Lieber, Science 313 (2006), p.1100.

[10] R. Haight, L. Sekaric, A. Afzali, D. Newns, Nano Lett., 9 (2009) , p.3166.

[11] S. Wippermann, N. Koch, W.G. Schmidt, Phys. Review. Lett. 100 (2008) , p.106802.

[12] R. Haight, G. Sirinakis, M. Reuter, Appl. Phys. Lett. 91(2007), p.233116.

[13] K.H. Hong , J. Kim , J.H. Lee , J. Shin , U.I. Chung , Nano Lett., 10 (2010), p.1671.

[14] C. Suspene , R. Barattin , C. Celle , A. Carella , J.P. Simonato, J. Phys. Chem. C, 114(2010), p.3924.

[15] M. Y. Bashouti , R. T. Tung , H. Haick, Small, 5(2009), p.2761.

[16] M. Nolan , S. O'Callaghan , G. Fagas , J.C. Greer , T. Frauenheim, Nano Lett., 7(2007), p.34.

[17] K. Seo, S. Sharma, A. A. Yasseri, D. R. Stewart, T. I. Kamins, Electrochemical and Solid-State Letters, 9 (2006), p. G69.

DOI: 10.1149/1.2159295

[18] X.H. Sun, C.P. Li, N. B. Wong, C.S. Lee, S.T. Lee, B. K. Teo, J. Am. Chem. Soc., 124 (2002) , p.14856.

[19] U. Landman, R. N. Barnett, A. G. Scherbakov, P. Avouris, Phys. Review. Lett. 85 (2000), p. (1959).

[20] W. A. Tisdale, K. J. Williams, B. A. Timp, D. J. Norris, E. S. Aydil, X.Y. Zhu, Science, 328 ( 2010) , p.1543.

[21] A. J. Nozik, Physica E 14 (2002), p.115.

[22] This is the calibrated result. The measurement system itself has a resistance of around 1. 29 Ohms. The area of the device is 0. 9 cm2.