Properties of Pressureless Sintered SiC-TiB2 Composites

Abstract:

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Silicon carbide( SiC) – titanium diboride (TiB2) composite was prepared with boron (B) and carbon (C) as sintering additive via pressureless sintering at 2180°C. The density of sintered samples achieved 96% of full densification. The mechanical properties and electrical conductivity of composite ceramics with different SiC content were researched. The results showed that with the increasing of SiC content the hardness and electrical resistivity of composites decreased, while the strength increased. Although the XRD patterns of sintered samples showed that non new phase was produced, SEM images showed that SiC particle enlarged and surrounded by TiB2 grain during sintering. In this case the fracture mode was intergranular fracture.

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Periodical:

Edited by:

Yiwang Bao, Li Tian and Jianghong Gong

Pages:

369-372

DOI:

10.4028/www.scientific.net/AMR.177.369

Citation:

Y. H. Chen et al., "Properties of Pressureless Sintered SiC-TiB2 Composites", Advanced Materials Research, Vol. 177, pp. 369-372, 2011

Online since:

December 2010

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$35.00

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