Chemical Mechanical Planarization of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent
Chemical mechanical planarization (CMP) of Cu pattern wafer based alkaline Cu slurry in GLSI was investigated. The performance of Cu removal rate and dishing condition were discussed in this paper. Different formation of alkali CMP slurry (Cu1 and Cu2 slurry) were observed by removal rate experiments and showed that alkaline slurry provided a robust polishing performance on initial removal rate, which Cu1 and Cu2 slurry were higher than that of commercial acidity slurry, and in addition, alkaline slurry also have good ending removal rate both in Cu1 and Cu2 slurry and favorable dishing in Cu2 slurry. Furthermore, the result indicated that Cu alkaline slurry with a complexing agent of R(NH2)n, compared with commercial acidity slurry with a inhibitor of Benzotriazol (BTA), have better application foreground for 45nm nod and more advanced nodes.
Yanguo Shi and Jinlong Zuo
Y. G. He et al., "Chemical Mechanical Planarization of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent", Advanced Materials Research, Vols. 183-185, pp. 2275-2278, 2011