The Study of Hole Injection in OLEDs with Ultra-Thin Sol-Gel TiO2 Layer

You Wang Hu; Xiao Yan Sun; Jian Duan

doi:10.4028/www.scientific.net/AMR.189-193.42

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 189-193The Study of Hole Injection in OLEDs with...

The Study of Hole Injection in OLEDs with Ultra-Thin Sol-Gel TiO₂ Layer

Abstract:

Organic light-emitting diodes (OLEDs) with inserting an ultrathin sol–gel titanium oxide (TiO₂) buffer layer between the ITO anode and hole transport layer (HTL) were fabricated. The carrier injection and the device efficiency were affected by surface morphology of TiO₂, which was changed by different plasma pre-treatment of ITO. Treated by CF₄ plasma, the TiO₂ layer is the smoothest, and treated by H₂ plasma it is like island. The TiO₂ layer like island is favor of carrier injection from the anode, which was attributed to the point discharged.

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Periodical:

Advanced Materials Research (Volumes 189-193)

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42-46

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.189-193.42

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Online since:

February 2011

Authors:

You Wang Hu, Xiao Yan Sun, Jian Duan

Keywords:

Hole Transport Layer, OLED, Point Discharged, TiO₂

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