Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media
The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.
Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang
S. L. Ou et al., "Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media", Advanced Materials Research, Vols. 189-193, pp. 4430-4433, 2011