Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

Abstract:

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The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

Info:

Periodical:

Advanced Materials Research (Volumes 189-193)

Edited by:

Zhengyi Jiang, Shanqing Li, Jianmin Zeng, Xiaoping Liao and Daoguo Yang

Pages:

4430-4433

DOI:

10.4028/www.scientific.net/AMR.189-193.4430

Citation:

S. L. Ou et al., "Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media", Advanced Materials Research, Vols. 189-193, pp. 4430-4433, 2011

Online since:

February 2011

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$35.00

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