Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

Sin Liang Ou; Chin-Pao Cheng; Chin Yen Yeh; Chung Jen Chung; Kuo Sheng Kao; Re Ching Lin

doi:10.4028/www.scientific.net/AMR.189-193.4430

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 189-193Characteristics of In-Ge-Sb-Sn-Te Thin Film Used...

Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media

Abstract:

The In₁₀Ge_xSb_52-xSn₂₃Te₁₅ films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO₂ films were used as protective layers. The thickness of the In₁₀Ge_xSb_52-xSn₂₃Te₁₅ film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In₁₀Ge_xSb_52-xSn₂₃Te₁₅ (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In₁₀Ge_xSb_52-xSn₂₃Te₁₅ films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

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Advanced Materials Research (Volumes 189-193)

Pages:

4430-4433

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.189-193.4430

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Online since:

February 2011

Authors:

Sin Liang Ou, Chin-Pao Cheng, Chin Yen Yeh, Chung Jen Chung, Kuo Sheng Kao, Re Ching Lin

Keywords:

In-Ge-Sb-Sn-Te, Phase Change Optical Recording, Thin Film

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