Fabrication of Ti-Doped ZnO Thin Films by Chemical Bath Deposition

Cheng Hsing Hsu; Wen Shiush Chen; Chun Hung Lai; Shu Fong Yan

doi:10.4028/www.scientific.net/AMR.194-196.2254

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Fabrication of Ti-Doped ZnO Thin Films by Chemical...

Fabrication of Ti-Doped ZnO Thin Films by Chemical Bath Deposition

Abstract:

Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 2.5×10²⁰ cm^-3, a resistivity of 2.8×10^-3 Ω-cm, and a mobility of 12 cm²/Vs.

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Periodical:

Advanced Materials Research (Volumes 194-196)

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2254-2258

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https://doi.org/10.4028/www.scientific.net/AMR.194-196.2254

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February 2011

Authors:

Cheng Hsing Hsu, Wen Shiush Chen, Chun Hung Lai, Shu Fong Yan

Keywords:

Chemical Bath Deposition (CBD), Ti-Doped ZnO Thin Film

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