Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method

Abstract:

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Electrical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10-4 A/cm2, a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.

Info:

Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

2249-2253

DOI:

10.4028/www.scientific.net/AMR.194-196.2249

Citation:

C. F. Tseng et al., "Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method", Advanced Materials Research, Vols. 194-196, pp. 2249-2253, 2011

Online since:

February 2011

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Price:

$35.00

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