Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films by Sol-Gel Method

Ching Fang Tseng; Pai Chuan Yang; Chun Hung Lai; Chih Wen Lee

doi:10.4028/www.scientific.net/AMR.194-196.2249

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Study of Mg(Zr0.05Ti0.95)O3 Dielectric Thin Films...

Study of Mg(Zr_0.05Ti_0.95)O₃ Dielectric Thin Films by Sol-Gel Method

Abstract:

Electrical properties and microstructures of Mg(Zr_0.05Ti_0.95)O₃ thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr_0.05Ti_0.95)O₃ peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A low leakage current density of 1.1×10^-4 A/cm², a dielectric constant of 9.4 and an optical bandgap of 3.6 were obtained for the prepared films. It may find application in dynamic random access memories and wireless communication devices.