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Comparative Study of GaN—Based LED Grown on Different Substrates

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Abstract:

The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on silicon and sapphire substrates, respectively. The Optical and crystal properties of InGaN/GaN MQWs LEDs were investigated by room temperature photoluminescence (PL), temperature dependent PL measurements, Raman spectra and high-resolution double crystal X-ray diffraction(DCXRD). These results indicate that the crystal quality of InGaN/GaN MQWs growth on sapphire substrate are more preferable than that of InGaN/GaN MQWs growth on silicon substrate, and the interface of MQWs growth on substrate or silicon substrate is level. The peak positions of InGaN/GaN MQWs are 2.78 eV (446nm) and 2.64 eV (468.8nm) growth on sapphire substrate and silicon substrate, respectively.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

2241-2244

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2241

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Online since:

February 2011

Authors:

Dong Sheng Peng, Ke Jin, Rui Sheng Zheng, Lei Liu, Zhe Chuan Feng

Keywords:

Gallium Nitride (GaN), LED, Sapphire, Silicon

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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