Comparative Study of GaN—Based LED Grown on Different Substrates

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The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on silicon and sapphire substrates, respectively. The Optical and crystal properties of InGaN/GaN MQWs LEDs were investigated by room temperature photoluminescence (PL), temperature dependent PL measurements, Raman spectra and high-resolution double crystal X-ray diffraction(DCXRD). These results indicate that the crystal quality of InGaN/GaN MQWs growth on sapphire substrate are more preferable than that of InGaN/GaN MQWs growth on silicon substrate, and the interface of MQWs growth on substrate or silicon substrate is level. The peak positions of InGaN/GaN MQWs are 2.78 eV (446nm) and 2.64 eV (468.8nm) growth on sapphire substrate and silicon substrate, respectively.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Edited by:

Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang

Pages:

2241-2244

DOI:

10.4028/www.scientific.net/AMR.194-196.2241

Citation:

D. S. Peng et al., "Comparative Study of GaN—Based LED Grown on Different Substrates", Advanced Materials Research, Vols. 194-196, pp. 2241-2244, 2011

Online since:

February 2011

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$35.00

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