Comparative Study of GaN—Based LED Grown on Different Substrates
The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on silicon and sapphire substrates, respectively. The Optical and crystal properties of InGaN/GaN MQWs LEDs were investigated by room temperature photoluminescence (PL), temperature dependent PL measurements, Raman spectra and high-resolution double crystal X-ray diffraction(DCXRD). These results indicate that the crystal quality of InGaN/GaN MQWs growth on sapphire substrate are more preferable than that of InGaN/GaN MQWs growth on silicon substrate, and the interface of MQWs growth on substrate or silicon substrate is level. The peak positions of InGaN/GaN MQWs are 2.78 eV (446nm) and 2.64 eV (468.8nm) growth on sapphire substrate and silicon substrate, respectively.
Jianmin Zeng, Taosen Li, Shaojian Ma, Zhengyi Jiang and Daoguo Yang
D. S. Peng et al., "Comparative Study of GaN—Based LED Grown on Different Substrates", Advanced Materials Research, Vols. 194-196, pp. 2241-2244, 2011