Structures and Properties of ZnO-Based Ceramic Films for Low-Voltage Varistors by the R.F. Magnetron Sputtering

Yin Qun Hua; Zhen Zhen Sun; Rui Fang Chen; Rui Li Xu

doi:10.4028/www.scientific.net/AMR.194-196.2233

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Structures and Properties of ZnO-Based Ceramic...

Structures and Properties of ZnO-Based Ceramic Films for Low-Voltage Varistors by the R.F. Magnetron Sputtering

Abstract:

ZnO-based ceramic targets with 50mm in diameter and 3mm in depth were prepared by the traditional solid-state sintering process. ZnO-based ceramic films were deposited on Au/Si substrates by R.F. magnetron sputtering using ZnO-based ceramic target. The films have been characterized by X-ray diffraction, energy dispersive X-ray spectroscopy and scanning electron microscopy. The ZnO-based ceramic films, with thickness close to 1 μm, show a good c-axis orientation, corresponding to vertical growth with respect to the substrate. The surface of the films looks very smooth and dense, and the films are the same composition as the ZnO ceramic target composed of Zn, Bi, Sb, Co, Cr and Mn. The ZnO-based ceramic films with nonlinear coefficient of 6.4, nonlinear voltage of 1.6V and the leakage current density 0.3μA/mm² could be achieved.

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Periodical:

Advanced Materials Research (Volumes 194-196)

Pages:

2233-2236

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.194-196.2233

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Online since:

February 2011

Authors:

Yin Qun Hua, Zhen Zhen Sun, Rui Fang Chen, Rui Li Xu

Keywords:

Inorganic Non-Metallic Material, Low-Voltage Varistor, RF Magnetron Sputtering, Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD), ZnO-Based Ceramic Film

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