Synthesis of High Surface Area Porous Silicon Carbide by a Modified Sol-Gel Method

Dong Hua Wang; Xin Fu

doi:10.4028/www.scientific.net/AMR.194-196.562

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 194-196Synthesis of High Surface Area Porous Silicon...

Synthesis of High Surface Area Porous Silicon Carbide by a Modified Sol-Gel Method

Abstract:

High surface area porous silicon carbide was synthesized by employing polymethylhydrosiloxane (PMHS) as soft template in the sol-gel process. In the sol-gel method, furfuryl alcohol and tetraethoxysilane were used respectively as carbon and silicon precursors for preparing a carbonaceous silica xerogel. PMHS was employed as pore-adjusting agent in the sol-gel process. The puriﬁed SiC sample was characterized by XRD、FTIR、SEM、HRTEM and BET. The results show that the SiC products are found to have high specific surface area of 125 m² /g and an average pore diameter of about 17 nm. PMHS has important effect on the surface area of the SiC products.

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Periodical:

Advanced Materials Research (Volumes 194-196)

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562-565

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https://doi.org/10.4028/www.scientific.net/AMR.194-196.562

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February 2011

Authors:

Dong Hua Wang, Xin Fu

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High Surface Area Silicon Carbide, Polymethylhydrosiloxane, Sol-Gel (SG)

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