Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Hua Wang; Jian Li; Ji Wen Xu; Ling Yang; Shang Ju Zhou

doi:10.4028/www.scientific.net/AMR.197-198.1781

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 197-198Synthesis and Ferroelectric Properties of Sol–Gel...

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂ Thin Films

Abstract:

Intergrowth-superlattice-structured SrBi₄Ti₄O₁₅–Bi₄Ti₃O₁₂ (SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization P_r of SBT–BIT films increases, while the coercive electric field E_c decreases. SBT–BIT films annealed at 700°C have a P_r value of 18.9µC/cm² which is higher than that of SBT (16.8µC/cm²) and BIT (14.6µC/cm²), and have the lowest E_c of 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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Periodical:

Advanced Materials Research (Volumes 197-198)

Pages:

1781-1784

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.197-198.1781

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Online since:

February 2011

Authors:

Hua Wang, Jian Li, Ji Wen Xu, Ling Yang, Shang Ju Zhou

Keywords:

Ferroelectric, Intergrowth Superlattice, Sol-Gel Preparation, SrBi₄Ti₄O₁₅-Bi₄Ti₃O₁₂

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