Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12 (SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Pr of SBT–BIT films increases, while the coercive electric field Ec decreases. SBT–BIT films annealed at 700°C have a Pr value of 18.9µC/cm2 which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ec of 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.