Preparation of N Doped ZnO Films by Magnetron Sputtering

Shan Shan Luo; Wen Kui Li; Ze Hua Zhou

doi:10.4028/www.scientific.net/AMR.197-198.348

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 197-198Preparation of N Doped ZnO Films by Magnetron...

Preparation of N Doped ZnO Films by Magnetron Sputtering

Abstract:

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N₂ flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N₂. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

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Periodical:

Advanced Materials Research (Volumes 197-198)

Pages:

348-351

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.197-198.348

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Online since:

February 2011

Authors:

Shan Shan Luo, Wen Kui Li, Ze Hua Zhou

Keywords:

Magnetron Sputtering, N-Doping, Zinc Oxide (ZnO)

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