Preparation of N Doped ZnO Films by Magnetron Sputtering

Abstract:

Article Preview

N doped ZnO thin films were prepared by magnetron sputtering. The effect of bias voltage, N2 flow and introducing of Al on the behavior of N doping into ZnO films were investigated. The results show that there is little help for N doping into the ZnO films by just adjusting N flow rate because the magnetron sputtering method has a relative weak ability on dissociating the N2. The data of co-doping of Al and N into ZnO films revealed that co-doping is an effective way to advance the N doping into ZnO films. The coordination of Al doping and bias voltage could help the N doping effectively.

Info:

Periodical:

Advanced Materials Research (Volumes 197-198)

Edited by:

Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng

Pages:

348-351

DOI:

10.4028/www.scientific.net/AMR.197-198.348

Citation:

S. S. Luo et al., "Preparation of N Doped ZnO Films by Magnetron Sputtering", Advanced Materials Research, Vols. 197-198, pp. 348-351, 2011

Online since:

February 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.