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Preparation of N-Doped SiC Whisker by Combustion Synthesis
Abstract:
N-doped SiC whiskers with diameters of about 0.2 μm and length of 3-7 μm were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene (PTFE) as the chemical activator. These whiskers are straight and curved morphologies. X-Ray powder diffraction pattern and energy-dispersive spectroscopy (EDS) confirm that the lattice constant of prepared whiskers is smaller than standard value of β-SiC due to the N doping arising.
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580-583
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February 2011
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© 2011 Trans Tech Publications Ltd. All Rights Reserved
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