Preparation of N-Doped SiC Whisker by Combustion Synthesis
N-doped SiC whiskers with diameters of about 0.2 μm and length of 3-7 μm were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene (PTFE) as the chemical activator. These whiskers are straight and curved morphologies. X-Ray powder diffraction pattern and energy-dispersive spectroscopy (EDS) confirm that the lattice constant of prepared whiskers is smaller than standard value of β-SiC due to the N doping arising.
Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng
X. L. Su et al., "Preparation of N-Doped SiC Whisker by Combustion Synthesis", Advanced Materials Research, Vols. 197-198, pp. 580-583, 2011