Preparation of N-Doped SiC Whisker by Combustion Synthesis

Abstract:

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N-doped SiC whiskers with diameters of about 0.2 μm and length of 3-7 μm were synthesized via combustion reaction of Si/C system in Ar atmosphere, using NH4Cl as the dopant and polytetrafluoroethylene (PTFE) as the chemical activator. These whiskers are straight and curved morphologies. X-Ray powder diffraction pattern and energy-dispersive spectroscopy (EDS) confirm that the lattice constant of prepared whiskers is smaller than standard value of β-SiC due to the N doping arising.

Info:

Periodical:

Advanced Materials Research (Volumes 197-198)

Edited by:

Huaiying Zhou, Tianlong Gu, Daoguo Yang, Zhengyi Jiang, Jianmin Zeng

Pages:

580-583

DOI:

10.4028/www.scientific.net/AMR.197-198.580

Citation:

X. L. Su et al., "Preparation of N-Doped SiC Whisker by Combustion Synthesis", Advanced Materials Research, Vols. 197-198, pp. 580-583, 2011

Online since:

February 2011

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Price:

$35.00

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