Microstructure and Dielectric Properties of Strontium Bismuth Niobium Ceramics Prepared by Molten Salt Method

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Abstract:

Strontium Bismuth Niobium (SBN) ceramics was prepared successfully using the powders synthesized from molten salt method. The evolution of microstructure with temperature increasing was studied and the influences of abnormal grain growth on dielectric properties were also presented in this paper. The results showed that pure strontium bismuth niobium ceramics without abnormal grain growth could be formed at 1150°C while the density was almost 95% of the theoretical density. Further investigations on dielectric properties indicated although abnormal grain growth did not shift the Curie point obviously, they lowered the dielectric constant corresponding to the Curie point. The dielectric loss was found to change with the frequency remarkably.

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Periodical:

Advanced Materials Research (Volumes 197-198)

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589-592

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February 2011

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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[1] Pazde Araujo, C. A. Cuchiaro and J. D. Mcmillan: Nature, Vol. 374 (1995), p.627.

Google Scholar

[2] Aidong Li, Di Wu and Huiqin Ling: Thin Sol. Fi, Vol375 (2000), p.215.

Google Scholar

[3] Yueming Li Jinsong Wang and Runhua Liao: J. Alloys. Compd. Vol496 (2010), p.282.

Google Scholar

[4] Baorang Li, Naiqiang Zhang and Huibin Chang: J. Alloys. Compd. In Press (2010).

Google Scholar

[5] Baorang Li, Xiaohui Wang and Longtu Li: Mater. Lett. Vol 57 (2003), p.1987.

Google Scholar

[6] Myoung-Sup Kim, Joon-Hyung Lee and Sang-Hee Cho: J. Eur. Ceram. Sci. Vol22 (2002), p.2107.

Google Scholar

[7] P.K. Patro, A.R. Kulkarni and C.S. Harendranath: Ceram. Int. Vol 30 (2004), p.1405.

Google Scholar

[8] Lin Sun, Chude Feng and Lidong Chen: Mater. Sci. Eng. B Vol 135 (2006), p.60.

Google Scholar

[9] M.J. Forbess, S. Seraji and Y. Wu: J. Appl. Phys. Vol 76 (2000), p.2934.

Google Scholar