Current Formulas of Silicon-Glass Anodic Bonding

Jia Lu Tang; Xiao Wei Liu; Rong Yan Chuai; Hai Feng Zhang

doi:10.4028/www.scientific.net/AMR.216.278

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 216Current Formulas of Silicon-Glass Anodic Bonding

Current Formulas of Silicon-Glass Anodic Bonding

Abstract:

To simulate the whole process of anodic bonding accurately, this paper makes the research on the current of anodic bonding with area and point cathode respectively. Based on the known models of anodic bonding, novel current formulas are deduced for anodic bonding with area cathode by means of the relation between glass resistivity and temperature. After calibrated by statistics of experimental data, the formulas quantitatively describe the relation between bonding current with time, as well as bonding voltage and bonding temperature. Further, using spreading model of anodic bonding, an approach to dealing with the problem of point cathode current is presented. The experiments prove that the current formulas from the approach are able to indicate the law of point cathode current.

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Periodical:

Advanced Materials Research (Volume 216)

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278-284

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.216.278

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Online since:

March 2011

Authors:

Jia Lu Tang, Xiao Wei Liu, Rong Yan Chuai, Hai Feng Zhang

Keywords:

Anodic Bonding, Current Formula, Point Cathode, Quantitative Relation

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