Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation

Yasmina Belaroussi; Tahar  Kerdja; Smail Malek

doi:10.4028/www.scientific.net/AMR.227.31

Paper Titles

Light Scattering Techniques Applied to Materials Science
p.11

Numerical Study of Butt Joining by Coaxial Powder Injection
p.17

Microstructure and Wear Behaviour of Al/TiB₂ Metal Matrix Composite
p.23

Numerical Simulation of Laser Bending of Thin Plate Stress Analysis and Prediction
p.27

Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation
p.31

Investigation on Thin Films Deposited by PECVD from a DiPhenylMethylSilane (DPMS) Vapors or Mixed with Oxygen for Low-K Material Application
p.35

Enhancement of Blue Spectral Response Intensity of PbS via Polyethylene Oxide-Adding for the Application to White LEDs
p.39

Study of Optical and Structure Properties for Different Composition Tin-Antimony-Selenium Thin Film
p.43

Analyses of Plasmas Produced by Laser Ablation of Fresh Aliments
p.49

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 227Angular Distribution and Ion Time of Flight...

Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation

Abstract:

The growth of thin films by laser ablation involves very complex physical processes. The quality of the layer and stoechiometry of the deposits depend on key parameters like the ion energy and their angular distribution. The evolution of ions number and energy, and the angular distributions in regards to the incident laser energy, have been studied by the mean of a charges collector. We present the polar diagrams of energy and number of ions collected by irradiating a silicon target using an excimer laser at different energies.