Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation

Abstract:

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The growth of thin films by laser ablation involves very complex physical processes. The quality of the layer and stoechiometry of the deposits depend on key parameters like the ion energy and their angular distribution. The evolution of ions number and energy, and the angular distributions in regards to the incident laser energy, have been studied by the mean of a charges collector. We present the polar diagrams of energy and number of ions collected by irradiating a silicon target using an excimer laser at different energies.

Info:

Periodical:

Edited by:

El-Hachemi Amara and Djamila Bennaceur-Doumaz

Pages:

31-34

DOI:

10.4028/www.scientific.net/AMR.227.31

Citation:

Y. Belaroussi et al., "Angular Distribution and Ion Time of Flight Produced on Silicon Target by Laser Irradiation", Advanced Materials Research, Vol. 227, pp. 31-34, 2011

Online since:

April 2011

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Price:

$35.00

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