Investigation on Thin Films Deposited by PECVD from a DiPhenylMethylSilane (DPMS) Vapors or Mixed with Oxygen for Low-K Material Application
A new class of low-k materials thin films, deposited from a DiPhenyleMethylSilane (DPMS) vapors was prepared using PECVD technique. These films are elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from pure DiPhenylMethylSilane (DPMS) using various plasma discharge power (100-400 W) or mixed with 50% of oxygen (O2).The improvements of film properties were investigated by capacitance–frequency (C–f), current–voltage (I–V) techniques and Fourier transform infrared spectroscopy (FTIR). The obtained results show that an increase in plasma discharges power from 100 to 400 watts leads to the decrease in dielectric constant value from 4.4 to 3.7 (measured at 10 kHz). The incorporation of oxygen improves the dielectric properties of the films; the dielectric constant value was reduced to 2.9.
El-Hachemi Amara and Djamila Bennaceur-Doumaz
L. Bouledjnib et al., "Investigation on Thin Films Deposited by PECVD from a DiPhenylMethylSilane (DPMS) Vapors or Mixed with Oxygen for Low-K Material Application", Advanced Materials Research, Vol. 227, pp. 35-38, 2011