Bulk-Quantity Synthesis of Ultralong SnO₂ Nanowires and their Application to a Backgated Triode Emission Device

Abstract:

A high yield of ultralong SnO₂ nanowires is successfully achieved by a simple thermal evaporation of SnO powders under air ambient. The as-synthesized SnO₂ nanobelts are single crystals with rutile structure. A backgated triode device for high-current applications has been developed with beltlike SnO₂ field emitters. The devices have confirmed triode operation with low turn-on gate voltage (about 170 V) and stable electron emission with brightness of 30 cd/m².

• Periodical: Advanced Materials Research (Volumes 239-242)
• Pages: 1088-1091
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.239-242.1088
• Online since: May 2011
• Authors: Li An Ma, Jin Yang Lin, Li Qin Hu, Yun Ye, Tai Liang Guo
• Keywords: Crystal Growth, Field Emission, Nanobelts, TiN Oxide

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