Bulk-Quantity Synthesis of Ultralong SnO2 Nanowires and their Application to a Backgated Triode Emission Device
A high yield of ultralong SnO2 nanowires is successfully achieved by a simple thermal evaporation of SnO powders under air ambient. The as-synthesized SnO2 nanobelts are single crystals with rutile structure. A backgated triode device for high-current applications has been developed with beltlike SnO2 field emitters. The devices have confirmed triode operation with low turn-on gate voltage (about 170 V) and stable electron emission with brightness of 30 cd/m2.
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
L. A. Ma et al., "Bulk-Quantity Synthesis of Ultralong SnO2 Nanowires and their Application to a Backgated Triode Emission Device", Advanced Materials Research, Vols. 239-242, pp. 1088-1091, 2011