Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

Abstract:

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B₂H₆ is 7.82 × 10^-4S/cm.

• Periodical: Advanced Materials Research (Volumes 239-242)
• Pages: 247-251
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.239-242.247
• Online since: May 2011
• Authors: Wei Yuan Wang, Qing Nan Zhao, Wen Hui Yuan, Pu Lei Yang, Hong Yu Liang, Ying Liu, Yu Hong Dong
• Keywords: Amorphous Silicon Thin Film, Conductivity, Doping Concentration, Optical Band Gap

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