Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films
P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6 is 7.82 × 10-4S/cm.
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
W. Y. Wang et al., "Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films", Advanced Materials Research, Vols. 239-242, pp. 247-251, 2011