Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

Abstract:

In this study, the electrical properties of as-deposited Sr_0.4Ba_0.6Nb₂O₆ (SBN) ferroelectric thin films on SiO₂/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H₂O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.

• Periodical: Advanced Materials Research (Volumes 239-242)
• Pages: 2628-2631
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.239-242.2628
• Online since: May 2011
• Authors: Ming Chang Kuan, Kai Huang Chen, Wen Cheng Tzou, Chien Min Cheng, Yi Jun Lin
• Keywords: Leakage Current Density, Memory Window, NvFeRAM, SBN Thin Film, SCF Process

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DOI: 10.1080/00150190490456727