Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices
In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6 (SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
M. C. Kuan et al., "Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices", Advanced Materials Research, Vols. 239-242, pp. 2628-2631, 2011