Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

Abstract:

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In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6 (SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.

Info:

Periodical:

Advanced Materials Research (Volumes 239-242)

Edited by:

Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He

Pages:

2628-2631

DOI:

10.4028/www.scientific.net/AMR.239-242.2628

Citation:

M. C. Kuan et al., "Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices", Advanced Materials Research, Vols. 239-242, pp. 2628-2631, 2011

Online since:

May 2011

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Price:

$35.00

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