Potential Analysis in Nanoturning of Single Crystal Silicon Using Molecular Dynamics

Ying Chun Liang; Zhi Guo Wang; Ming Jun Chen; Jia Xuan Chen; Zhen Tong

doi:10.4028/www.scientific.net/AMR.239-242.3236

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242Potential Analysis in Nanoturning of Single...

Potential Analysis in Nanoturning of Single Crystal Silicon Using Molecular Dynamics

Abstract:

Molecular dynamics simulations of the single crystal silicon nanoscale cutting with a diamond tool in ductile mode are carried out to investigate the adhesion phenomenon. After relaxation the silicon atoms on the surface reconstruct to make the potential decrease. The silicon atoms close to the diamond tool have the lowest potential (<-5.5 eV) and form a stable structure with surface atoms on the tool surface.

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Periodical:

Advanced Materials Research (Volumes 239-242)

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3236-3239

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.239-242.3236

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Online since:

May 2011

Authors:

Ying Chun Liang, Zhi Guo Wang, Ming Jun Chen, Jia Xuan Chen, Zhen Tong

Keywords:

Molecular Dynamic (MD), Nanoscale Cutting, Potential Energy, Single Crystal Silicon

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