Preparation of Cu2ZnSnS4 Treated with Post-Sulfurization in a Sulfur Vapor Atmosphere

Min Yen Yeh; Dong Sing Wuu

doi:10.4028/www.scientific.net/AMR.239-242.642

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242Preparation of Cu2ZnSnS4 Treated with...

Preparation of Cu₂ZnSnS₄ Treated with Post-Sulfurization in a Sulfur Vapor Atmosphere

Abstract:

Cu₂ZnSnS₄ (CZTS) prepared by sol-gel spin-coating deposition was treated with post-sulfurization in a sulfur vapor atmosphere. The crystallinity degree of the CZTS could be significantly improved through post-sulfurization treatment. Granular structures of the CZTS as synthesized at a temperature of over 240 °C and treated with post sulfurization were obtained. The composition ratios of the as-sulfurized CZTS were close to the composition stoichiometry of CZTS with an electrical resistance of ~ 1.7 Ω cm. An as-prepared CZTS based solar cell shows an open-circuit voltage of 300 mV, and a short-circuit current of 2.48 mA cm^-2.

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Periodical:

Advanced Materials Research (Volumes 239-242)

Pages:

642-645

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.239-242.642

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Online since:

May 2011

Authors:

Min Yen Yeh, Dong Sing Wuu

Keywords:

Absorption Layer, Cu₂ZnSnS₄, Solar Cell, Sol-Gel Spin-Coating Deposition, Sulfur Vapor, Sulfurization

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