The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices

Abstract:

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In this study, we investigated that of Al/ Ba(Zr0.1Ti0.9)O3 (BZT)/Pt/Ti/SiO2/Silicon metal-ferroelectric-metal-insulator-semiconductor (MFM) ferroelectric structures and found the memory effect and capacitance of annealed BZT films during the different annealing temperature. Additionally, the capacitance and leakage current density were about 4.3 nF and 1´10-6A/cm2, respectively. From C-V curves, the ferroelectric properties and charges accumulation of annealed BZT films were also found during the annealing temperature of 700°C.

Info:

Periodical:

Advanced Materials Research (Volumes 239-242)

Edited by:

Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He

Pages:

895-898

DOI:

10.4028/www.scientific.net/AMR.239-242.895

Citation:

K. H. Chen et al., "The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices", Advanced Materials Research, Vols. 239-242, pp. 895-898, 2011

Online since:

May 2011

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$35.00

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