The Ferroelectric Characteristics of Ba(Zr_0.1Ti_0.9)O₃ Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices

Abstract:

In this study, we investigated that of Al/ Ba(Zr_0.1Ti_0.9)O₃ (BZT)/Pt/Ti/SiO₂/Silicon metal-ferroelectric-metal-insulator-semiconductor (MFM) ferroelectric structures and found the memory effect and capacitance of annealed BZT films during the different annealing temperature. Additionally, the capacitance and leakage current density were about 4.3 nF and 1´10^-6A/cm², respectively. From C-V curves, the ferroelectric properties and charges accumulation of annealed BZT films were also found during the annealing temperature of 700°C.

• Periodical: Advanced Materials Research (Volumes 239-242)
• Pages: 895-898
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.239-242.895
• Online since: May 2011
• Authors: Kai Huang Chen, Jen Hwan Tsai, Chia Lin Wu, Jian Yang Lin, Chien Min Cheng
• Keywords: BZT, Dielectric Constant, Ferroelectric, Leakage Current Density, RF Sputter

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DOI: 10.7554/elife.32744.016