The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Tsung Fu Chien; Jen Hwan Tsai; Kai Huang Chen; Chien Min Cheng; Chia Lin Wu

doi:10.4028/www.scientific.net/AMR.239-242.891

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 239-242The Ferroelectric and Electrical Properties of...

The Ferroelectric and Electrical Properties of CaBi₄Ti₄O₁₅ Thin Films Prepared by Sol-Gel Technology

Abstract:

In this study, thin films of CaBi₄Ti₄O₁₅ with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO₂/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi₄Ti₄O₁₅ thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10^-7 A/cm² and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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Advanced Materials Research (Volumes 239-242)

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891-894

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https://doi.org/10.4028/www.scientific.net/AMR.239-242.891

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May 2011

Authors:

Tsung Fu Chien, Jen Hwan Tsai, Kai Huang Chen, Chien Min Cheng, Chia Lin Wu

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CBT, CV, Ferroelectric, IV, Sol-Gel Technology, Thin Film

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DOI: 10.31979/etd.wf7u-geuq

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