Study on the Properties of Doped La in BaBi4Ti4O15 Ceramic

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BaBi4-xLaxTi4O15 (BBLT) ceramics were prepared by conventional solid phase sintering ceramics processing technology. The crystal structure and the microstructure were detected by X-ray diffraction (XRD) and scanning electron microscope (SEM). The XRD analyses show that La3+ ions doping did not change the crystal structure of BBT ceramics. The sintering temperature increased from 1120°C to 1150°C with increasing Lanthanum content from 0 to 0.5, but it widened the sintering temperature range from 20°C to 50°C and refined the grain size of the BBT ceramic. Additionally, polarization treatment was performed and finally piezoelectric property was measured. As a result, the piezoelectric constant d33 of the 0.1at.% doped BBLT ceramics reached its highest value about 22pc/N at polarizing electric field of 8kV/mm and polarizing temperature of 120°C for 30min.

Info:

Periodical:

Advanced Materials Research (Volumes 26-28)

Edited by:

Young Won Chang, Nack J. Kim and Chong Soo Lee

Pages:

243-246

Citation:

X. H. Yang et al., "Study on the Properties of Doped La in BaBi4Ti4O15 Ceramic", Advanced Materials Research, Vols. 26-28, pp. 243-246, 2007

Online since:

October 2007

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$38.00

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5 (a)Frequency dependence of dielectric constant for BBLT-x (b)Frequency dependence of dielectric loss for BBLT-x Fig. 3 Frequency dependence of dielectric behaviors for BBT-x.

0 0. 1 0. 2 0. 3 0. 4 0. 5 4 6 8 10 12 14 16 18 20 22 24 d33( pc / N) L a c o n t e n t x Fig. 4 Piezoelectric constant d33 versus the amount of La doping.

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