Light Emission from a Si Based ZnO Structure

Abstract:

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A novel silicon-based light emitting structure comprising a lithium doped zinc oxide film and a high energy electrons generating silicon structure is presented. Red light emission with wavelength of ~630 nm is generated and recorded in electroluminescent spectrum under an applied DC voltage of 8.5 V.

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Periodical:

Edited by:

George Ferguson, Ashvin Thambyah, Michael A Hodgson and Kelly Wade

Pages:

89-92

DOI:

10.4028/www.scientific.net/AMR.275.89

Citation:

F. Chen et al., "Light Emission from a Si Based ZnO Structure", Advanced Materials Research, Vol. 275, pp. 89-92, 2011

Online since:

July 2011

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Price:

$35.00

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