Electrical Properties Optimization of Ba_0.9Sr_0.1TiO₃ Thin Films Deposited by Sol-Gel

Abstract:

This paper reports a study of Ba_0.9Sr_0.1TiO₃ films deposited on Pt/Ti/SiO₂/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: ε_r = 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

• Periodical: Advanced Materials Research (Volume 277)
• Pages: 1-10
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.277.1
• Online since: July 2011
• Authors: Didier Fasquelle, M. Mascot, J.C. Carru
• Keywords: BST, Dielectric, Ferroelectric, Sol-Gel (SG), Thin Film, Tunability

References

[1] Dubois M. A, Muralt P, Sensor and Actuators 77 (1999) 106-112.

[2] Yi-Chu Hsu, Chia-Che Wu, Cheng-Chun Lee, G. Z Cao, I.Y. Shen, Sensors and Actuators A 116 (2004) 369-377.

[3] Hong Zhu, Jianmin Miao, Minoru Noda, Masanori Okuyama, Sensors and Actuators A110 (2004) 371-377.

[4] Jaffe B, Cook Jr, W. R and Jaffe H, Academic Press, London, New York (1971) 185-212.

[5] Alexandru H. V, Berbecaru C, Ioachim A, Banciu M. G, Toacsen M. I, Nedelcu L, Ghetu D, Stoica G, Materials Science and Engineering B118 (2005) 92-96.

DOI: 10.1016/j.mseb.2004.12.070

[6] Mascot M, Fasquelle D, Velu G, Ferri A, Desfeux R, Courcot L, Carru J. C, Ferroelectrics 362 (2008) 79-86.

DOI: 10.1080/00150190802003639

[7] Ihlefeld J, Lauglhin B, Hunt-Lowery A, Borland W, Kingon A, Maria J. P, J. Electroceram 14 (2005) 95-102.

DOI: 10.1007/s10832-005-0866-6

[8] Malic B, Boerasu I, Mandeljc M, Kosec M, Sherman V, Yamada T, Setter N, Vakadinovic M, Journal of European Ceramic Society 27 (2007) 2945-2948.

DOI: 10.1016/j.jeurceramsoc.2006.11.020

[9] Tahan D. M, Safari A, Klien L. C, J. Am. Ceram. Soc 79 (1996) 1593-1598.

[10] G Vélu, Carru J. C, Cattan E, Remiens D, Melique X, Lippens D, Ferroelectrics 288 (2003) 59-69.

DOI: 10.1080/00150190390212007

[11] R.L. Bayer, C.B. Roundy, Ferroelectrics 3, 333 (1972).

[12] Ch.G. Wu, W. L Zhang, Y. R Li, X. Zh Liu, J. Zhu, B. W Tao, Infrared Physics & Technology 48 (2006) 187-191.

[13] G. Arlt, D. Hennings, G. De With, J. Appl. Phys. 58 (1985) 1619-1625.

[14] M.H. Frey, Z. Xu, P. Han, D.A. Payne, Ferroelectrics 206-207 (1998) 337-353.

[15] L. L Sun, O. K Tan, W. G Liu, X. F Chen, W. Zhu, Microelectronic Engineering 66 (2003) 738-744.

[16] Wencheng Hu, Chuanren Yang, Wanli Zhang, Guijun Liu, Dong Dong, J. Sol-Gel Sci. Techn., 39 (2006) 293-298.

[17] Hu W., Yang C., Zhang W., Liu G., Ceramics International 33 (2007) 1299-1303.

[18] N.K. Pervez, P.J. Hansen, R.A. York, Appl. Phys. Lett. 85, N°19 (2004) 4451-4453.

[19] F. M Pontes, E Longo, E. R Leite, J. A Varela, Thin Solid Films 386 (2001) 91-98.

DOI: 10.1016/s0040-6090(01)00781-7

[20] Dipankar Ghosh, B. Laughlin, J. Nath, A.I. Kingon, M.B. Steer, J. -P. Maria, Thin Solid Films 496 (2006) 669-673.

DOI: 10.1016/j.tsf.2005.09.025

[21] M.M. Saad, P. Baxter, R.M. Bowman, J.M. Gregg, F.D. Morrison, J.F. Scott, J. Phys.: Condens. Matter 16 (2004) 451-456.

[22] C.B. Parker, J. -P. Maria, A.I. Kingon, Appl. Phys. Lett. 81 (2002) 340-342.

[23] H. Frayssignes, B.L. Cheng, G. Fantozzi, T.W. Button, Jounal of the European Ceramic Society 25 (2005) 3203-3206.

DOI: 10.1016/j.jeurceramsoc.2004.07.030

[24] C. Zhou and D. M. Newns, J. Appl. Phys. 82 (1997) 3081.

[25] Y. W. Cho, S. K. Choi, and G. Venkata Rao, Appl. Phys. Lett. 86 (2005) 202905.

[26] C.M. Hanson, H.R. Beratan, J.F. Belcher, K.R. Udayakumar, K.L. Soch, Proc. SPIE 3379 (1998) 60-68.

[27] W. Liu, J.S. Ko, W. Zhu, Thin Solid Films 371 (2000) 254-258.