Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel

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This paper reports a study of Ba0.9Sr0.1TiO3 films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr = 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

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Periodical:

Edited by:

Bondan Tiara Sofyan

Pages:

1-10

DOI:

10.4028/www.scientific.net/AMR.277.1

Citation:

D. Fasquelle et al., "Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel", Advanced Materials Research, Vol. 277, pp. 1-10, 2011

Online since:

July 2011

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$35.00

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