An Alkaline SiO2 Slurry for Fine Atomizing CMP
A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).
Fei Hu and Beibei Wang
J. Zhai et al., "An Alkaline SiO2 Slurry for Fine Atomizing CMP", Advanced Materials Research, Vol. 279, pp. 258-261, 2011