An Alkaline SiO2 Slurry for Fine Atomizing CMP

Jing Zhai; Zi Feng Ni; Qing Zhong Li

doi:10.4028/www.scientific.net/AMR.279.258

Paper Titles

Housing Die-Casting and its Process Based on Numerical Simulation
p.235

Analysis and Numerical Simulation about the Influence of the Flux Ratio of Methane and Air on Combustion
p.239

Dynamic Analysis of Angular Position Simulator
p.247

Acoustic Performance Analysis of Impedance Compound Muffler with Aluminum Foam
p.253

An Alkaline SiO₂ Slurry for Fine Atomizing CMP
p.258

Synthesis and Simplification of Fractal Profile
p.262

Computer Aided Design of Technology and Die for the Shoe Toe
p.266

A Fine Atomization CMP Slurry for Copper
p.271

Research on the ICP Acceleration Sensors Detecting Roadbed Compaction Degree Test
p.275

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 279An Alkaline SiO2 Slurry for Fine Atomizing CMP

An Alkaline SiO₂ Slurry for Fine Atomizing CMP

Abstract:

A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).

You might also be interested in these eBooks

Mechanics, Solid State and Engineering Materials

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 279)

Pages:

258-261

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.279.258

Citation:

Cite this paper

Online since:

July 2011

Authors:

Jing Zhai, Zi Feng Ni, Qing Zhong Li

Keywords:

CMP, Fine Atomization, Polishing Slurry

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] P.B. Zantye, A.Kumar and A.K. Sikder: Chemical mechanical planarization for microelectronics applications. Mater. Sci. Forum Vol. 45 (1992), p.89.

Google Scholar

[2] K.L. Zhang and Z.T. Song: Research and Prospects of Chemical Mechanical Polishing for ULSI. Microelectronics Vol. 35 (2005), p.226.

Google Scholar

[3] A F. Michael: The early days of CMP. Solid State Technol Vol. 40 (1997), p.81.

Google Scholar

[4] T. Minoru and Oxide: CMP mechanisms. Solid State Technol Vol. 40(1997), p.1701.

Google Scholar

[5] T.Ohmi, et al: Tatal room temperature wet cleaning for Si substrate surface. Electrochem Soc Vol. 43(1996), p.749 .

Google Scholar

[6] Y.L. Liu, B.M. Tan and K.L. Zhang: Substrate material properties and processing test technology project in ULSI. Metallurgical Industry Press (2002).

Google Scholar

[7] J.X.Su, R.I. Kang and D.M. Guo: Technology analysis of wafer chemical mechanical polishing in the manufacture of ULSI. Semiconductor technology Vol.28(2003), p.18.

Google Scholar

[8] G.J. Pietsch, Y.J. Chabal and G.S. Higashi: The atomic-scale removal mechanism during chemo- mechanical polishing of Si(100) and Si(111). Surface Science Vol.331-333(1995), p.395.

DOI: 10.1016/0039-6028(95)00292-8

Google Scholar

[9] L.M. Cao, Y.H.Hu, et al.: Chemical-Mechanical Polishing Technique in the Semiconductor Industry. Hubei chemical Vol.4(2000), p.7.

Google Scholar

[10] G.Tan, J.L.Wu: Chemic-mechanical Polishing of Silicon Wafer. Chinese Journal of Science Instrument Vol. 26(2005), p.104.

Google Scholar