A Fine Atomization CMP Slurry for Copper

Abstract:

In this paper, a kind of alkaline slurry was introduced, in which silica was used as the abrasive, H₂O₂ was used as the oxidize, glycine was used as the complexing agent, azimidobenzene was used as the surfactant, and borax was used as the pH regulator. The atomization polishing method was used, and the effects of the traditional polishing and atomization polishing were compared. After the atomization polishing, the surface roughness of copper was 7.61 nm and the material removal rate was 188 nm/min; After the traditional polishing, the surface roughness was 15.22 nm and the material removal rate was 236 nm/min. The dosage of polishing slurry used in the atomization polishing is dozens of times less than that in the traditional polishing.

• Periodical: Advanced Materials Research (Volume 279)
• Pages: 271-274
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.279.271
• Online since: July 2011
• Authors: Hui Zhang, Zi Feng Ni, Qing Zhong Li
• Keywords: Atomization, Chemical Mechanical Polishing (CMP), Copper, Slurry

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