Principle and Experiment of Ultrasonic Subtle Atomization in CMP

Xiao Peng Liu; Xiao Chun Chen; Qing Zhong Li

doi:10.4028/www.scientific.net/AMR.279.287

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A New Method for Hardened Gears Machining - Ausform Finishing Process
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Development for the Comprehensive Optimization Technology of Process Lubrication Regime in Double Cold Reduction
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 279Principle and Experiment of Ultrasonic Subtle...

Principle and Experiment of Ultrasonic Subtle Atomization in CMP

Abstract:

The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

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Periodical:

Advanced Materials Research (Volume 279)

Pages:

287-290

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.279.287

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Online since:

July 2011

Authors:

Xiao Peng Liu, Xiao Chun Chen, Qing Zhong Li

Keywords:

Chemical Mechanical Polishing (CMP), Material Removal Rate (MRR), Subtle Atomization, Ultrasonic

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