Principle and Experiment of Ultrasonic Subtle Atomization in CMP

Abstract:

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The method of chemical mechanical polishing (CMP) using slurry which was ultrasonic subtle atomized was researched, and the system of Ultrasonic Subtle Atomization—Chemical Mechanical Polishing was established. The effects of polish parameters on polishing were also investigated. The results show that the experimental system can fully realize the expected function of polishing, the use of slurry is about one-tenth of the amount of traditional CMP, material removal rate can reach 113.734nm/min and the surface roughness is similar to the surface roughness in the traditional way.

Info:

Periodical:

Edited by:

Fei Hu and Beibei Wang

Pages:

287-290

DOI:

10.4028/www.scientific.net/AMR.279.287

Citation:

X. P. Liu et al., "Principle and Experiment of Ultrasonic Subtle Atomization in CMP", Advanced Materials Research, Vol. 279, pp. 287-290, 2011

Online since:

July 2011

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Price:

$35.00

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