Simulation of Electron Transport in Silicon using Monte Carlo Method

Abstract:

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A Monte Carlo method is employed to investigate the properties of electron transport with considerations of electron-phonon scattering including intervalley scattering and intravalley scattering. Under different electric fields, the coupling relations between electrons and phonons are studied, and the behaviors of absorbing and releasing phonons from electrons are also analyzed. The results show the scattering events of absorbing phonons from electrons decrease with the increasing simulation time. At the same temperature, the mean free path of electron increases initially and then decreases with the increasing electric field intensity, and finally approaches an asymptotic value.

Info:

Periodical:

Advanced Materials Research (Volumes 284-286)

Main Theme:

Edited by:

Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu

Pages:

871-874

DOI:

10.4028/www.scientific.net/AMR.284-286.871

Citation:

Z. Wang et al., "Simulation of Electron Transport in Silicon using Monte Carlo Method", Advanced Materials Research, Vols. 284-286, pp. 871-874, 2011

Online since:

July 2011

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Price:

$35.00

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