Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films

Abstract:

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InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

Info:

Periodical:

Advanced Materials Research (Volumes 287-290)

Edited by:

Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li

Pages:

1456-1459

DOI:

10.4028/www.scientific.net/AMR.287-290.1456

Citation:

P. C. Chang et al., "Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films", Advanced Materials Research, Vols. 287-290, pp. 1456-1459, 2011

Online since:

July 2011

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$35.00

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