Growth of ZnS Films and Application in Heterojunction

Jian Huang; Lin Jun Wang; Ke Tang; Ji Jun Zhang; Wei Min Shi; Yi Ben Xia; Xiong Gang Lu

doi:10.4028/www.scientific.net/AMR.287-290.2140

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 287-290Growth of ZnS Films and Application in...

Growth of ZnS Films and Application in Heterojunction

Abstract:

ZnS films were prepared by radio-frequency (RF) magnetron sputtering method. The effects of substrate temperature and annealing treatment on the properties of ZnS films were studied. The ZnS films were characterized by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The results showed that the higher substrate temperature and post-deposition annealing treatment was helpful in improving the crystalline quality of the films, and the film had an n-type conductivity. N-type ZnS films were also deposited on p-type single-crystalline silicon (Si) substrates to fabricate ZnS/ Si heterojunction. The current-voltage (I-V) characteristic of the heterojunction was examined, which showed a rectifying behavior with turn-on voltage of about 2V.

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Periodical:

Advanced Materials Research (Volumes 287-290)

Pages:

2140-2143

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.287-290.2140

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Online since:

July 2011

Authors:

Jian Huang, Lin Jun Wang, Ke Tang, Ji Jun Zhang, Wei Min Shi, Yi Ben Xia, Xiong Gang Lu

Keywords:

Heterojunction, Si, ZnS

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