Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas

Eun Soo Lee; Rachmat Adhi Wibowo; Kyoo Ho Kim

doi:10.4028/www.scientific.net/AMR.29-30.215

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 29-30Highly c-Axis Oriented Al-Doped ZnO Thin Films...

Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H₂/Ar Sputtering Gas

Abstract:

Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

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Periodical:

Advanced Materials Research (Volumes 29-30)

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215-218

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.29-30.215

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Online since:

November 2007

Authors:

Eun Soo Lee, Rachmat Adhi Wibowo, Kyoo Ho Kim

Keywords:

Al-Doped ZnO, Hydrogen, Sputtering, Transparent Conducting Oxide (TCO)

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