Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.