Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas
Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.
Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek
E. S. Lee et al., "Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas", Advanced Materials Research, Vols. 29-30, pp. 215-218, 2007