Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas

Abstract:

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Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

Info:

Periodical:

Advanced Materials Research (Volumes 29-30)

Edited by:

Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek

Pages:

215-218

DOI:

10.4028/www.scientific.net/AMR.29-30.215

Citation:

E. S. Lee et al., "Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas", Advanced Materials Research, Vols. 29-30, pp. 215-218, 2007

Online since:

November 2007

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Price:

$35.00

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