Channel Direction Effect on the GaAs Mesfet Performances for MEMS Accelerometer Application

Abstract:

Article Preview

An experimental investigation has been carried out with clarifying the external mechanical stress effect on GaAs metal-semiconductor field-effect transistor (MESFET) I-V characteristic curve which as the sensitive element of micro-accelerometer in different condition. In this paper, we research different channel directions to explore the output characteristics of the GaAs MESFET which fabricated at the root of the cantilever. We design three channel directions which angled with the cantilever as 0 degree, 45 degree, 90 degree. We find that when the Channel direction parallel to the cantilever direction, ∆U has the maximum value of 12.13mv. The sensitivity of 0 degree is 0.04mv/g higher than the 90 degree. The dynamic result indicates that the channel direction parallel to the cantilever direction is the optimized design structure.

Info:

Periodical:

Advanced Materials Research (Volumes 291-294)

Edited by:

Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu

Pages:

3121-3125

DOI:

10.4028/www.scientific.net/AMR.291-294.3121

Citation:

W. L. Shi et al., "Channel Direction Effect on the GaAs Mesfet Performances for MEMS Accelerometer Application", Advanced Materials Research, Vols. 291-294, pp. 3121-3125, 2011

Online since:

July 2011

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.