Effect of Substrates on the Characteristics of Silicon Carbide Deposited from Methyltrichlorosilane

Abstract:

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SiC is fabricated by chemical vapor deposition (CVD) on graphite and Si3N4 ceramic respectively. The morphology, composition, grain size and electrical conductivity of SiC deposited on graphite (CVD-SiC(C)) and on Si3N4 ceramic (CVD-SiC(N)) are investigated and compared. The morphology of CVD-SiC(C) and CVD-SiC(N) is much different with each other. The grain size of CVD-SiC(C) is bigger than that of CVD-SiC(N). It is nearly stoichiometric in CVD-SiC(C), while carbon-rich in CVD-SiC(N), so the electrical conductivity and dielectric loss of CVD-SiC(N) are much higher than that of CVD-SiC(C). As the annealing temperature increases, the grain size and electrical conductivity of CVD-SiC(C) and CVD-SiC(N) both increase.

Info:

Periodical:

Advanced Materials Research (Volumes 295-297)

Edited by:

Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu

Pages:

1422-1427

DOI:

10.4028/www.scientific.net/AMR.295-297.1422

Citation:

C. Y. Lu et al., "Effect of Substrates on the Characteristics of Silicon Carbide Deposited from Methyltrichlorosilane", Advanced Materials Research, Vols. 295-297, pp. 1422-1427, 2011

Online since:

July 2011

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$35.00

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