Preparation and Study of Strong Magnetoelectric Coupling on Multiferroic BaTiO3/La0.7Sr0.3MnO3 Bilayer Heterostructure

Article Preview

Abstract:

The BaTiO3/La0.7Sr0.3MnO3((BTO/LSMO) bilayer films had been epitaxially grown on (001) oriented LaAlO3 (LAO) single crystal substrate by using pulsed laser deposition technique,. The measurements of electric and magnetic properties showed that the bilayer heterostructure possessed low dielectric constant (εr=263), high ferromagnetic curie temperature (Tc=317K), and natural ferromagnetic and ferroelectric properties. The magnetoelectric (ME) voltage coefficient for the bilayer heterostructures at room temperature was around 140 mV/cm.Oe, which is one magnitude order higher than others. The interface coupling parameter k between ferromagnetic and ferroelectric layers was 0.68.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 295-297)

Pages:

2015-2019

Citation:

Online since:

July 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2011 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] W. Eerenstein, N.D. Mathur and J.F. Scott: Nature vol. 442 (2006), p.759

Google Scholar

[2] N.A. Spaldin and M. Fiebig: Science vol. 309 (2005), p.391

Google Scholar

[3] N.A. Hill: J. Phys Chem. B vol. 104 (2000), p.6694

Google Scholar

[4] C.W. Nan, M.I. Bichurin, S.X. Dong, D. Viehland, and G. Srinivasan: J. Appl. Phys vol. 103 (2008), p.031101

Google Scholar

[5] Y. Zhang, C.Y. Deng, J. Ma, Y.H. Lin, and C.W. Nan: Appl. Phys. Lett vol. 92 (2008), p.062911

Google Scholar

[6] J.P. Zhou, H.C. He, Z. Shi, and C.W. Nan: Appl. Phys. Lett vol. 88 (2006), p.013111

Google Scholar

[7] W. Zhu, S.A. Akbar, R. Asiaie, and P.K. Dutta: J. Electroceram vol. 2 (1998), p.21

Google Scholar

[8] H.B. Sharma, H.N.K. Sarma, and A. Mansingh: J. Mate. Sci vol. 34 (1999), p.1385

Google Scholar

[9] A.M. Haghiri-Gosnet, J. Wolfman, B. Mercey, C. Simon, P. Lecoeur, M. Korzenski, M. Hervieu, R. Desfeux, and G. Baldinozzi: J. Appl. Phys vol. 88 (2000), p.4257

DOI: 10.1063/1.1309040

Google Scholar

[10] Y.G. Ma, W.N. Cheng, M. Ning, and C.K. Ong: Appl. Phys. Lett vol. 90 (2007), p.152911

Google Scholar

[11] G. Srinivasan, E.T. Rasmussen, B.J. Levin, and R. Hayes: Phys. Rev. B vol. 65 (2002), p.134402

Google Scholar

[12] M. Avellaneda and G. Harshe: J. Intell. Mater. Syst. Struct vol. 5 (1994), p.501

Google Scholar

[13] V. Petrov, G. Srinivasan, O.V. Ryabkov, S.V. Averkin and M.I. Bichurin: Solid. State. Commun vol. 144 (2007), p.50

DOI: 10.1016/j.ssc.2007.07.022

Google Scholar

[14] M.I. Bichurin, V.M. Petrov, and G. Srinivasan: Phys. Rev. B vol. 68 (2003), p.054402.

Google Scholar