Effect of Post-Annealing Ambient on Electrical Structural Properties and Optical Properties of ZnO:Al Transparent Films

Abstract:

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Transparent ZnO:Al films deposited by RF/DC magnetron sputtering in room temperature are annealed under gaseous ammonia ambient and air ambient, respectively. The characteristics of ZnO films are examined by XRD, SEM, Hall measurement and optical transmission spectra. The XRD and SEM analysis shows that both films are crystallized in the wurzite phase with a preferential orientation along the c-axis and have a smooth dense surface. Hall measurement results indicate ZnO:Al films annealed under ammonia ambient convert to p-type conduction with the high carrier concentration of 8.3×1018 cm-3. Optical transmission spectra show a high transmittance (~85%) in the visible region.

Info:

Periodical:

Advanced Materials Research (Volumes 299-300)

Edited by:

Jianzhong Wang and Jingang Qi

Pages:

675-678

DOI:

10.4028/www.scientific.net/AMR.299-300.675

Citation:

L. D. Tang et al., "Effect of Post-Annealing Ambient on Electrical Structural Properties and Optical Properties of ZnO:Al Transparent Films", Advanced Materials Research, Vols. 299-300, pp. 675-678, 2011

Online since:

July 2011

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Price:

$35.00

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