Effect of Post-Annealing Ambient on Electrical Structural Properties and Optical Properties of ZnO:Al Transparent Films

Li Dan Tang; Bing Wang; Jian Zhong Wang

doi:10.4028/www.scientific.net/AMR.299-300.675

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 299-300Effect of Post-Annealing Ambient on Electrical...

Effect of Post-Annealing Ambient on Electrical Structural Properties and Optical Properties of ZnO:Al Transparent Films

Abstract:

Transparent ZnO:Al films deposited by RF/DC magnetron sputtering in room temperature are annealed under gaseous ammonia ambient and air ambient, respectively. The characteristics of ZnO films are examined by XRD, SEM, Hall measurement and optical transmission spectra. The XRD and SEM analysis shows that both films are crystallized in the wurzite phase with a preferential orientation along the c-axis and have a smooth dense surface. Hall measurement results indicate ZnO:Al films annealed under ammonia ambient convert to p-type conduction with the high carrier concentration of 8.3×10¹⁸ cm^-3. Optical transmission spectra show a high transmittance (~85%) in the visible region.

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Advanced Materials Research (Volumes 299-300)

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675-678

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https://doi.org/10.4028/www.scientific.net/AMR.299-300.675

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July 2011

Authors:

Li Dan Tang, Bing Wang, Jian Zhong Wang

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p-Type, RF/DC Magnetron Sputtering, Transparent Film, ZnO Film

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