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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 306-307Photoluminescence Properties of InGaN/GaN Multiple...

Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition

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Abstract:

Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD), were studied by time-resolved photoluminescence (TRPL) spectroscopic technique. Samples involved have similar basic structures of three QWs but different well-composition and barrier/well dimensions. TRPL results show that PL intensity and decay time increase with the number of QWs and the indium composition. Correlation of physical properties with crystalline perfection open the way for optimized designs of InGaN MQW LED, with controlled the indium composition and QW numbers.

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Periodical:

Advanced Materials Research (Volumes 306-307)

Pages:

1133-1137

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.306-307.1133

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Online since:

August 2011

Authors:

Ting Wei Kuo, Ling Min Kong, Zhe Chuan Feng, Wei Liu, Soo Jin Chua, Ying Sheng Huang

Keywords:

InGaN/GaN, LED, MOCVD, MQW, Photoluminescence (PL), Time-Resolved Photoluminescence

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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